Phase Transition across Anisotropic NbS 3 and Direct Gap Semiconductor TiS 3 at Nominal Titanium Alloying Limit
نویسندگان
چکیده
منابع مشابه
Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.
A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS3 ) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS3 monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS3 is highly...
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S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, and A. F. Hebard Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA Department of Physics, University of Florida, Gainesville, Florida 32611, USA Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32611, USA (Received 24 May 2011; published 17 J...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2020
ISSN: 0935-9648,1521-4095
DOI: 10.1002/adma.202000018